Electrical Engineering Department Hosts Seminar on Molecular Beam Epitaxy

As part of the scientific and cultural activities for the first semester of the 2017-2018 academic year, the Electrical Engineering Department hosted a seminar on the topic of “Introduction to Molecular Beam Epitaxy”. The lecture, presented by Dr. Mohammed Juma Haider, was held in Dijla Hall in the presence of the department head, Dr. Dhari Yousif Mahmoud, along with scientific and administrative assistants, heads of scientific branches, faculty members, and department staff.

The seminar introduced the MBE (Molecular Beam Epitaxy) device, used for manufacturing semiconductors, transistors, solar cells, and detectors. The device comprises three main chambers: the loading chamber, storage chamber, and construction chamber. Capable of creating highly pure materials like silicon, zinc, and gallium, the device can construct layers at a precision of ten atomic layers per second, with a real-time monitoring capability. Key requirements for operation include continuous power supply, liquid nitrogen cooling, and highly pure semiconductor materials.

The event concluded with a Q&A session, allowing attendees to discuss and clarify their queries.